Tokyo-based Mitsubishi Electric Corp has launched the new PSF15S92F6 15A/600V transfer-mold power semiconductor model in its lineup of super-mini dual-in-line package intelligent power modules (DIPIPM), with embedded silicon carbide metal-oxide-semiconductor field-effect transistors (SiC-MOSFETs).
The module includes a three-phase inverter bridge with built-in SiC-MOSFET, HVIC, LVIC and bootstrap diode chips. Other functions include short-circuit protection (using an external shunt resistor), control power supply under-voltage protection (Fo output on N-side protection), and an analog temperature voltage output function.
The new module features low power consumption, optimized for home appliance applications such as high-grade energy-efficient air conditioners. The SiC-MOSFET reduces power consumption by about 70% compared with Mitsubishi Electric’s existing super-mini DIPIPM, contributing to an overall reduction in air conditioner power consumption.
The module also allows a simplified inverter system design. The footprint (24.0mm × 38.0mm × 3.5mm) and pin configurations are compatible with Mitsubishi Electric’s existing super-mini DIPIPM Ver.6 (PSSxxS92x6series,etc). Also, designed with a high threshold voltage, SiC-MOSFET does not require a negative bias circuit, allowing simplification of the system design. Finally, there are fewer external components due to the use of an embedded bootstrap diode with a current-limiting resistor.
Mitsubishi Electric commercialized its first DIPIPM transfer-mold intelligent power module in 1997, the beginning of its ongoing effort targeting miniaturization and energy saving in inverter systems. Development of the new DIPIPM was partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO). The new PSF15S92F6 module is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS) directive 2011/65/EU.